2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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Retrieved 7 November KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Views Read Edit View history. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost dagasheet about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists.

The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.

The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical.

Retrieved 31 October Modern 2N datasheets often, but not always, specify f T of 2. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an August datasheet. RCA by had changed their specification to give 2. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.


By using this site, you agree to the Terms of Use and Privacy Policy. Other manufacturers around this time also would specify similar values e. Commons category link dahasheet Wikidata. This page was last edited on 22 Novemberat In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes datashet BDY38 although the BDY38 has lower voltage ratings than the 2N Wikimedia Commons has media related to 2N In other projects Wikimedia Commons.

2N (InterFET) – N-Channel Dual Silicon Junction Field-Effect Transistor, N-Channel

The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat. The total power dissipation written P D in most American datasheets, 22n3955 tot in European ones depends on the heatsink to which the 2N is connected. Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.


Datasueet robot builder’s bonanza 2nd ed. The KD have higher power and higher current than 2N Retrieved from ” https: Graf; William Sheets Daasheet are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. It has a transition frequency of 2.

Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

2N3955 PDF Datasheet浏览和下载

With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0.

The frequency at which gain begins to drop off may be much lower, see below. Build your own low-power transmitters: With an datzsheet heatsink, that is: